- Low cost and for R & D -
The Model
RTP-6 is a low cost infrared lamp heating system designed for a maximum 6-inch wafer.
This system is
designed for testing wafers, including silicon semiconductors and compound semiconductors,
by rapid heating/cooling in varying atmospheres. It is manually operated and is best
suited to R & D.
1. Rapid heat
treatment. The metal
chamber type cold wall permits rapid cooling. |
| Temperature range | R.T. to 1000 ºC(Temperature range controlled by pyrometer is 400 to 1200 ºC) |
| Wafer heated | One 6-inch wafer as standard. (4.5-inch wafer is optional.) |
| Atmosphere | Gas, gas flow, air as standard (Vacuum is optional.) |
| Heating system | Top one-side heating system with parabolloidal reflection infrared gold image lamp |
| Maximum heating rate | 10ºC/sec
when SiC-coated carbon susceptor is used 50ºC/sec when SiC-coated carbon susceptor is not used (* controlled by pyrometer) |
| Heating uniformity | ΔT=10ºC
when SiC-coated carbon susceptor is used in nitrogen atmosphere (at 800ºC) ΔT=10ºC when SiC-coated carbon susceptor is not used, in nitrogen atmosphere (at 800ºC) |
| Control sensor | Thermocouple JIS "K" as standard (inserted into carbon susceptor coated with SiC) |
| Heating control system | Sensor output - program emf comparing closed control system |
| Heat exhaust system | Forced hot air exhaust system with ring blower |
| Control output | 200 VAC, three phase, 25.4 kVA |
| Safety features | Cooling water flow rate, thermocouple burnout, electric leak, emergency stop, mechanism for preventing pressure rise in chamber |